Zhou Tiejun 教授电子信息学院(集成电路科学与工程学院) 电子科学与技术,物理学 职务: 毕业院校:
南京大学
邮件: tjzhou@hdu.edu.cn
办公地点:
|
|
Zhou Tiejun 教授电子信息学院(集成电路科学与工程学院) 电子科学与技术,物理学 职务: 毕业院校:
南京大学
邮件: tjzhou@hdu.edu.cn
办公地点:
|
|
|
|
10 访问 |
|
个人简介
杭州电子科技大学特聘教授,博士生导师,浙江省特聘专家。长期从事自旋电子学、磁存储和磁性纳米多功能复合材料等领域的研究工作。多次应邀在国际磁存储年会、国际磁学年会以及国际先进科技材料大会等国际著名学术会议上作邀请报告。在包括国际顶级学术期刊在内的学术刊物上发表论文一百五十多篇,并著有3个邀请专著章节。在自旋电子学和纳米技术等领域拥有五十多个专利和产品。多次担任国际磁学年会、磁学和磁性材料年会的分会主席;担任2008年磁存储年会议出版物主席,2005年国际磁性材料物理研讨会的程序和出版物主席,IEEE Transactions on Magnetics和Journal of Magnetism & Magnetic Materials的客座编辑等。目前主要从事:1)新型低能耗、高速、高密度自旋存储器件和芯片;2)基于自旋器件的存算一体芯片及其应用系统;3)智能传感系统和应用。 教育经历
1987年09月- 1991年06月兰州大学,本科 1991年09月- 1994年06月吉林大学,硕士 1994年09月- 1997年06月南京大学,博士 工作经历
1997年08月- 1999年10月南京大学,讲师 2000年10月- 2005年09月新加坡数据存储研究院,高级研究工程师 2005年10月- 2007年12月希捷科技,主任工程师 2008年01月- 2017年12月新加坡数据存储研究院,高级科学家和项目领导者 2018年01月- 至今杭州电子科技大学,电子信息学院,教授 社会职务
研究领域
1.自旋电子学材料和器件 2.自旋存储和存算芯片 3.智能传感系统 教学与课程
微电子学导论
纵向科研
基于自旋轨道转矩的新型高速低功耗自旋存储芯片(SOT-MRAM)的研制 横向科研
论文
1. Haodong Fan, Menghao Jin, Yongming Luo, Hongxin Yang, Birui Wu, Zhongshu Feng, Yanshan Zhuang, Ziji Shao, Changqiu Yu, Hai Li, Jiahong Wen, Ningning Wang, Bo Liu, Wenjun Li, Tiejun Zhou*. Field-Free Spin-Orbit Torque Switching in Synthetic Ferro and Antiferromagents with Exchange Field Gradient. Advanced Functional Materials, 33(16), 2211953 (2023). 2. Haodong Fan, Ziji Shao, Jiale Wang, Menghao Jin, Birui Wu, Zhongshu Feng, Mingzhang Wei, Changqiu Yu, Jiahong Wen, Hai Li, Tingwei Chen, Bo Liu, Wenjun Li, Tiejun Zhou*. Elucidating the role of an Ir insertion layer in mediating interfacial perpendicular anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torque in Pt/Ir/Co. Physical Review B 108, 224409 (2023). 3. Birui Wu, Menghao Jin, Ziji Shao, Haodong Fan, Jiahong Wen, Hai Li, Changqiu Yu, Bo Liu, Tiejun Zhou*. Shape anisotropy induced field-free switching and enhancement of dampinglike field in Pt/Co/PtMn heterostructures with a wedged ultrathin antiferromagnetic PtMn layer. Physical Review B, 108, 054417 (2023). . Ziji Shao, Changqiu Yu, Menghao Jin, Jiahong Wen, Haodong Fan, Bo Liu, Tiejun Zhou*. Emergence of diverse lanthanum fluorides under high pressure: From insulators to half-metals and superconductors. Physical Review B, 108, 064411 (2023). 5. Haodong Fan, Menghao Jin, Birui Wu, Mingzhang Wei, Jiale Wang, Ziji Shao, Changqiu Yu, Jiahong Wen, Hai Li, Wenjun Li, Tiejun Zhou*. Field-free switching and high spin–orbit torque efficiency in Co/Ir/CoFeB synthetic antiferromagnets deposited on miscut Al2O3 substrates. Applied Physics Letters, 122(26), 262404 (2023). 6. Zhongshu Feng, Changqiu Yu, Haixia Huang, Haodong Fan, Mingzhang Wei, Birui Wu, Menghao Jin, Yanshan Zhuang, Ziji Shao, Hai Li, Jiahong Wen, Jian Zhang, Xuefeng Zhang, Ningning Wang, Sai Mu, Tiejun Zhou*. Ta thickness effect on field-free switching and spin–orbit torque efficiency in a ferromagnetically coupled Co/Ta/CoFeB trilayer. Chinese Physics B, 32(4), 048504 (2023). 7.Wu, Birui; Jin, Menghao; Fan, Haodong; Wei, Mingzhang; Feng, Zhongshu; Shao, Ziji; Yu, Changqiu; Liu, Bo; Zhou, Tiejun*, "Electrically manipulating exchange bias and realizing multiple remanent states in platinum/cobalt/iridium manganese heterostructures",CELL REPORTS PHYSICAL SCIENCE 5,101757 (2024) 8.Shen, Haobo; Xu, Lie; Jin, Menghao; Li, Hai; Yu, Changqiu; Liu, Bo; Zhou, Tiejun*,“Sparse reservoir computing with vertically coupled vortex spin-torque oscillators for time series prediction”,Nanotechnology 35,415201(2024) 科研成果
基于自旋轨道转矩的新型高速低功耗自旋存储芯片(SOT-MRAM)的研制 著作
专利成果
荣誉及奖励
软件成果
1. Haodong Fan, Menghao Jin, Yongming Luo, Hongxin Yang, Birui Wu, Zhongshu Feng, Yanshan Zhuang, Ziji Shao, Changqiu Yu, Hai Li, Jiahong Wen, Ningning Wang, Bo Liu, Wenjun Li, Tiejun Zhou*. Field-Free Spin-Orbit Torque Switching in Synthetic Ferro and Antiferromagents with Exchange Field Gradient. Advanced Functional Materials, 33(16), 2211953 (2023). (SCI一区TOP期刊,IF=19).
2. Haodong Fan, Ziji Shao, Jiale Wang, Menghao Jin, Birui Wu, Zhongshu Feng, Mingzhang Wei, Changqiu Yu, Jiahong Wen, Hai Li, Tingwei Chen, Bo Liu, Wenjun Li, Tiejun Zhou*. Elucidating the role of an Ir insertion layer in mediating interfacial perpendicular anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torque in Pt/Ir/Co. Physical Review B 108, 224409 (2023). (SCI二区TOP期刊,IF=3.7).
3. Birui Wu, Menghao Jin, Ziji Shao, Haodong Fan, Jiahong Wen, Hai Li, Changqiu Yu, Bo Liu, Tiejun Zhou*. Shape anisotropy induced field-free switching and enhancement of dampinglike field in Pt/Co/PtMn heterostructures with a wedged ultrathin antiferromagnetic PtMn layer. Physical Review B, 108, 054417 (2023). (SCI二区TOP期刊, IF= 3.7).
4. Ziji Shao, Changqiu Yu, Menghao Jin, Jiahong Wen, Haodong Fan, Bo Liu, Tiejun Zhou*. Emergence of diverse lanthanum fluorides under high pressure: From insulators to half-metals and superconductors. Physical Review B, 108, 064411 (2023). (SCI二区TOP期刊, IF= 3.7).
5. Haodong Fan, Menghao Jin, Birui Wu, Mingzhang Wei, Jiale Wang, Ziji Shao, Changqiu Yu, Jiahong Wen, Hai Li, Wenjun Li, Tiejun Zhou*. Field-free switching and high spin–orbit torque efficiency in Co/Ir/CoFeB synthetic antiferromagnets deposited on miscut Al2O3 substrates. Applied Physics Letters, 122(26), 262404 (2023). (SCI二区TOP期刊,IF=4).
6. Zhongshu Feng, Changqiu Yu, Haixia Huang, Haodong Fan, Mingzhang Wei, Birui Wu, Menghao Jin, Yanshan Zhuang, Ziji Shao, Hai Li, Jiahong Wen, Jian Zhang, Xuefeng Zhang, Ningning Wang, Sai Mu, Tiejun Zhou*. Ta thickness effect on field-free switching and spin–orbit torque efficiency in a ferromagnetically coupled Co/Ta/CoFeB trilayer. Chinese Physics B, 32(4), 048504 (2023). (SCI三区期刊, IF= 1.652).
7. Xiaomi Chen, Hai Li, Haodong Fan, Jiayu Fu, Tiejun Zhou*. MTJ-based random number generation and its application in SNN handwritten digits recognition. AIP Advances, 13, 105113 (2023). (SCI四区期刊, IF= 1.6). 8.Wu, Birui; Jin, Menghao; Fan, Haodong; Wei, Mingzhang; Feng, Zhongshu; Shao, Ziji; Yu, Changqiu; Liu, Bo; Zhou, Tiejun; “Electrically manipulating exchange bias and realizing multiple remanent states in platinum/cobalt/iridium manganese heterostructures”,Cell Reports Physical Science 5,101757,2024 |